| PART |
Description |
Maker |
| HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays
Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Vishay Intertechnology, Inc.
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
| LTC4440ES6 LTC4440 LTC4440EMS8E LTC444009 |
High Speed, High Voltage High Side Gate Driver
|
Linear Technology
|
| LTC4440-5-15 |
High Speed, High Voltage, High Side Gate Driver
|
Linear Technology
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
